Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage
نویسندگان
چکیده
منابع مشابه
Schottky Tunneling Source Impact Ionization Mosfet (sts-imos) with Enhanced Device Performance
In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS) with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdown voltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impact ionization and source induced tunneling for the current gating mechanism of the device. The silicide so...
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ژورنال
عنوان ژورنال: Engineering Science and Technology, an International Journal
سال: 2016
ISSN: 2215-0986
DOI: 10.1016/j.jestch.2015.07.014